Effect of thermal annealing on the optoelectronic properties of Cu-Fe-O thin films deposited by reactive magnetron co-sputtering

In this work, the influences of temperature and air residual pressure during post-annealing treatment on structural, optical electrical properties copper iron oxide thin films were investigated. The co-sputtered from metallic Cu Fe targets in presence argon oxygen gas mixture. powers dissipated adjusted to fix Cu/Fe ratio close 1 films. as-deposited initially amorphous, they annealed under different oxidizing conditions as a function temperatures (380, 450 550°C) pressures (secondary vacuum, primary atmosphere corresponding 10−4, 10−1 105 Pa respectively). Spinel CuFe2O4 clearly detected by X-ray diffraction analysis after air-annealing. With diminishing pressure, are reduced. It was shown that delafossite CuFeO2 phase growth is possible limited range accompanied crystallization mixture which nature secondary phases depends pressure. Cu-Fe-O then detailed discussed according structural evolution with conditions.